- Part Status :
- Input Type :
- Operating Temperature :
- Package / Case :
- Voltage - Supply :
- Channel Type :
- Logic Voltage - VIL, VIH :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Rise / Fall Time (Typ) | |
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1,222
In-stock
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IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||
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2,111
In-stock
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IXYS Integrated Circuits Division | 2A MOSFET 8 DIP DUAL INV/NON-INV | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||
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GET PRICE |
3,724
In-stock
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Infineon Technologies | IC DRIVER DUAL LOW SIDE 8-DIP | - | Obsolete | Tube | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 6 V ~ 20 V | Independent | Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | 15ns, 10ns | ||
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GET PRICE |
652
In-stock
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Infineon Technologies | IC DRIVER DUAL LOW SIDE 8-DIP | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 6 V ~ 20 V | Independent | Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | 15ns, 10ns | ||
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GET PRICE |
2,737
In-stock
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Infineon Technologies | IC DRIVER DUAL LOW SIDE 8-DIP | - | Obsolete | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 6 V ~ 20 V | Independent | Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | 15ns, 10ns | ||
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GET PRICE |
2,291
In-stock
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Infineon Technologies | IC MOSFET DRIVER LOW-SIDE 8-DIP | - | Obsolete | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 12 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 43ns, 26ns | ||
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2,914
In-stock
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IXYS Integrated Circuits Division | MOSFET DVR ULT FAST 14A 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | |||
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3,241
In-stock
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-DI | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||
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2,887
In-stock
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Infineon Technologies | IC DRIVER DUAL LOW SIDE 8DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 6 V ~ 20 V | Independent | Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | 15ns, 10ns | |||
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886
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | |||
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1,482
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL ENABLE 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | |||
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3,942
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL NONINV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | |||
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2,164
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
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GET PRICE |
1,419
In-stock
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Maxim Integrated | IC MOSFET DVR DUAL PWR DIP | - | Obsolete | Tube | Inverting, Non-Inverting | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 18 V | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2V | 1.5A, 1.5A | 25ns, 25ns | ||
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2,541
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8DIP | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | |||
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1,443
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
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3,760
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
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2,574
In-stock
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IXYS Integrated Circuits Division | 14A 8 PIN DIP NON INVERTING | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | |||
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770
In-stock
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IXYS Integrated Circuits Division | 14A 8 PIN DIP INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | |||
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761
In-stock
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Infineon Technologies | IC DRIVER DUAL LOW SIDE 8-DIP | - | Active | Tube | Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 6 V ~ 20 V | Independent | Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | 15ns, 10ns | |||
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3,432
In-stock
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Infineon Technologies | IC MOSFET DRIVER LOW SIDE 8DIP | - | Active | Tube | Non-Inverting | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 12 V ~ 18 V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 43ns, 26ns |
