- Packaging :
- Input Type :
- Mounting Type :
- Supplier Device Package :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,347
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
1,265
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
869
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
1,498
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
1,116
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
3,700
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tape & Reel (TR) | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
3,711
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
2,172
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO220-5 | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
2,160
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO263-5 | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
899
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
2,164
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
1,297
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
1,443
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
1,133
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
3,760
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
3,746
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
3,665
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tape & Reel (TR) | Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
878
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
3,629
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
GET PRICE |
1,076
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DFN | - | Active | Digi-Reel® | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
|
|
|
964
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DFN | - | Active | Cut Tape (CT) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
1,048
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DFN | - | Active | Tape & Reel (TR) | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
2,242
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||
|
|
|
991
In-stock
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns |
